 English |
|
|
|
|
|
|
|
| 2N6724 Datasheet, PDF (1/1 Pages) Zetex Semiconductors – NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTORS | |||
| |||
|
NPN SILICON PLANAR MEDIUM POWER
DARLINGTON TRANSISTORS
ISSUE 1 Â MARCH 94
FEATURES
* 50 Volt VCEO
* Gain of 15k at IC = 0.5 Amp
* Ptot=1 Watt
2N6724
2N6725
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation at Tamb= 25°C
Operating and Storage Temperature Range
SYMBOL
VCBO
VCEO
VEBO
ICM
IC
Ptot
Tj:Tstg
C
B
E
E-Line
TO92 Compatible
2N6724 2N6725
50
60
40
50
10
2
1
1
-55 to +200
UNIT
V
V
V
A
A
W
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL
2N6724
2N6725 UNIT CONDITIONS.
MIN. MAX. MIN. MAX.
Collector-Base
V(BR)CBO 50
60
V
IC=1µA, IE=0
Breakdown Voltage
Collector-Emitter
V(BR)CEO 40
50
V
IC=1mA, IB=0*
Breakdown Voltage
Emitter-Base
V(BR)EBO 10
10
V
IE=10µA, IC=0
Breakdown Voltage
Collector Cut-Off
ICBO
Current
Emitter Cut-Off
IEBO
Current
1.0
µA
VCB=30V, IE=0
1.0 µA VCB=40V, IE=0
0.1
0.1 µA VEB=8V, IC=0
Collector-Emitter
VCE(sat)
1.0
1.0 V
IC=200mA, IB=2mA*
Saturation Voltage
1.5
1.5 V
IC=1A, IB=2mA*
Base-Emitter
VBE(sat)
2.0
2.0 V
IC=1A, IB=2mA*
Saturation Voltage
Base-Emitter
VBE(on)
2.0
2.0 V
IC=1A, VCE=5V*
Turn-On Voltage
Static Forward
hFE
Current Transfer
Ratio
Collector Base
CCB
Capacitance
25K
25K
15K
15K
4K 40K 4K 40K
10
10 pF
IC=200mA, VCE=5V*
IC=500mA, VCE=5V*
IC=1A, VCE=5V*
VCB=10V, f=1MHz
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle â¤2%
3-7
|
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese