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| 2N6714 Datasheet, PDF (1/1 Pages) Zetex Semiconductors – NPN SILICON PLANAR MEDIUM POWER TRANSISTORS | |||
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NPN SILICON PLANAR
MEDIUM POWER TRANSISTORS
ISSUE 1 Â MARCH 94
FEATURES
* 40 Volt VCEO
* Gain of 50 at IC= 1 Amp
* Ptot= 1 Watt
2N6714
2N6715
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation at Tamb= 25°C
Operating and Storage Temperature Range
SYMBOL
VCBO
VCEO
VEBO
ICM
IC
Ptot
Tj:Tstg
C
B
E
E-Line
TO92 Compatible
2N6714 2N6715
40
50
30
40
5
2
1
1
-55 to +200
UNIT
V
V
V
A
A
W
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL
2N6714
2N6715 UNIT CONDITIONS.
MIN. MAX. MIN. MAX.
Collector-Base
V(BR)CBO 40
50
V
IC=1mA, IE=0
Breakdown Voltage
Collector-Emitter
V(BR)CEO 30
40
V
IC=10mA, IB=0*
Breakdown Voltage
Emitter-Base
V(BR)EBO 5
5
V
IE=1mA, IC=0
Breakdown Voltage
Collector Cut-Off
ICBO
Current
Emitter Cut-Off
IEBO
Current
0.1
µA
VCB=40V, IE=0
0.1 µA VCB=50V, IE=0
0.1
0.1 µA VEB=5V, IC=0
Collector-Emitter
VCE(sat)
0.5
0.5 V
IC=1A, IB=100mA*
Saturation Voltage
Base-Emitter
VBE(on)
1.2
1.2 V
IC=1A, VCE=1V*
Turn-On Voltage
Static Forward
hFE
Current Transfer
Ratio
Transition
fT
Frequency
55
55
60
60
50 250 50 250
IC=10mA, VCE=1V*
IC=100mA, VCE=1V*
IC=1A, VCE=1V*
50
500 50
500 MHz IC=50mA, VCE=10V
Collector Base
CCB
Capacitance
30
30
pF
VCE=10V, f=1MHz
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle â¤2%
3-5
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