 English |
|
|
|
|
|
|
|
| 2N6517 Datasheet, PDF (1/1 Pages) Zetex Semiconductors – NPN SILICON PLANAR MEDIUM POWER TRANSISTOR | |||
| |||
|
NPN SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 1 Â MARCH 94
FEATURES
* 350 Volt VCEO
* Gain of 15 at IC=100mA
2N6517
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Base Current
Continuous Collector Current
Power Dissipation at Tamb= 25°C
Operating and Storage Temperature Range
SYMBOL
VCBO
VCEO
VEBO
IB
IC
Ptot
Tj:Tstg
C
B
E
E-Line
TO92 Compatible
VALUE
350
350
6
250
500
680
-55 to +200
UNIT
V
V
V
mA
mA
mW
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO 350
V
IC=100µA, IE=0
Collector-Emitter
Breakdown Voltage
V(BR)CEO 350
V
IC=1mA, IB=0*
Emitter-Base Breakdown V(BR)EBO 5
Voltage
V
IE=10µA, IC=0
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter
Saturation Voltage
ICBO
IEBO
VCE(sat)
Base-Emitter
Saturation Voltage
Base-Emitter Turn-On
Voltage
VBE(sat)
VBE(on)
50
nA
50
nA
0.3
V
0.35
V
0.5
V
1.0
V
0.80
V
0.85
V
0.90
V
2.0
V
VCB=250V, IE=0
VEB=5V, IC=0
IC=10mA, IB=1mA*
IC=20mA, IB=2mA*
IC=30mA, IB=3mA*
IC=50mA, IB=5mA*
IC=10mA, IB=1mA*
IC=20mA, IB=2mA*
IC=30mA, IB=3mA*
IC=100mA, VCE=10V*
Static Forward Current
hFE
Transfer Ratio
20
30
30
200
20
200
15
IC=1mA, VCE=10V
IC=10mA, VCE=10V*
IC=30mA, VCE=10V*
IC=50mA, VCE=10V*
IC=100mA, VCE=10V*
Transition Frequency
fT
40
MHz
IC=10mA, VCE=20V, f=20MHz
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle â¤2%
3-3
|
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese