PDSP16330 Datasheet, PDF (5/7 Pages) Mitel Networks Corporation – Pythagoras Processor

PDSP16330/A/B
SWITCHING CHARACTERISTICS
Characteristic
Value
PDSP16330 PDSP16330A PDSP16330B
Min. Max. Min. Max. Min. Max.
Units
Conditions
† Input data setup to clock rising edge
15
12
12
ns
† Input data Hold after clock rising edge
2
2
2
ns
† CEX, CEY Setup to clock rising edge
30
12
12
ns
† CEX, CEY Hold aher clock rising edge
0
0
0
ns
† FORM, S1:0 Setup to clock rising edge ¹⁵
12
12
ns
† FORM, S1:0 Hold after clock rising edge ⁷
2
2
ns
† Clock rising edge to valid data
* Clock period
5
40
5
25
100
50
5 25
40
ns 2 x LSTTL + 20pF
ns
† Clock high time
† Clock low time
† Latency
25
15
25
15
24 24 24 24
15
ns
15
ns
24 24 ^cycles
† OEM, OEP low to data high data valid
30
25
25
ns 2 x LSTTL + 20pF
† OEM, OEP low to data low data valid
30
† OEM, OEP high to data high impedance
30
† OEM, OEP low to data high impedance
30
25
25
25
25
25
25
ns 2 x LSTTL + 20pF
ns 2 x LSTTL + 20pF
ns 2 x LSTTL + 20pF
† Vcc current (TTL input levels)
110
180 225
mA V_CC = Max
Outputs unloaded
Clock freq. = Max
† Vcc current (CMOS input levels)
70
120 150
mA V = Max
CC
Outputs unloaded
Clock freq. = Max
NOTES
1. LSTTL is equivalent to I_OH = 20µA, I_OL = -0.4mA
2. Current is defined as negative into the device
3. CMOS input levels are defined as: V_IH = V_DD - 0.5V, V_IL = +0.5V
4. All parameters marked * are tested during production.
Parameters marked † are guaranteed by design and characterisation.
5. All timings are dependent on silicon speed. This speed is tested by measuring clock period.
This guarantees all other timings by characterisation and design.
ABSOLUTE MAXIMUM RATINGS
Supply voltage, V_cc
-0.5V to + 7.0V
Input voltage, V_IN
-0.5V to VCC + 0.5V
Output voltage, V
our
-0.5V to VCC + 0.5V
Clamp diode current per pin, I_K (see Note 2)
±18mA
Static discharge voltage (HMB), V_STAT
500V
Storage temperature. T
stg
-65°C to + 150°C
Ambient temperature with
power applied T_amb:
Commercial
0°C to + 70°C
Industrial
-40°C to + 85°C
Military
-55 °C to + 125°C
Package power dissipation P_TOT
Junction temperature
1200mW
150°C
THERMAL CHARACTERISTICS
Package Type
θJC°C/W
AC
12
GC
12
θJA°C/W
36
35
NOTES
1. Exceeding these ratings may cause permanent damage.
Functional operatlon under these conditions is not implied.
2. Maximum dissipation or 1 second should not be exceeded;
only one output to be tested at any one time.
3. Exposure to Absoulte Maximum Ratings for extended periods
may affect device reliability.
5