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ES3ABF Datasheet, PDF (2/3 Pages) Microdiode Electronics (Jiangsu) Co.,Ltd. – SURFACE MOUNT SUPERFAST RECOVERY RECTIFIER | |||
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ES3ABF THRU ES3JBF
Fig.1 Reverse Recovery Time Characteristic And Test Circuit Diagram
50 ohm
Noninductive
10 ohm
Noninductive
trr
+0.5
+
25Vdc
approx
-
1 ohm
NonInductive
D.U.T
PULSE
GENERATOR
Note 2
OSCILLOSCOPE
Note 1
0
-0.25
Noteï¼1.Rise Time = 7ns, max.
Input Impedance = 1megohm,22pF.
2. Ries Time =10ns, max.
Source Impedance = 50 ohms.
Fig.2 Maximum Average Forward Current Rating
3.5
3.0
2.4
1.8
1.2
Single phase half wave resistive
0.6 or inductive P.C.B mounted on
0.5Ã0.5"(12.7Ã12.7mm) pad areas.
0.0
25 50 75 100 125 150 175
Lead Temperature (°C)
Fig.4 Typical Forward Characteristics
10
TJ=25°C
1.0
0.1
0.01
ES3ABF~ES3DBF
ES3EBF/WS3GBF
ES3JBF
0.001
0
0.5
1.0
1.5
2.0
2.5
Instaneous Forward Voltage (V)
-1.0
10ns/div
Set time Base for 10ns/div
Fig.3 Typical Reverse Characteristics
300
100
TJ=125°C
10
TJ=75°C
1.0
TJ=25°C
0.1
0
20
40
60
80
100
% of PIV.VOLTS
Fig.5 Typical Junction Capacitance
70
60
50
40
30
TJ=25°C
20
f = 1.0MHz
Vsig = 50mVp-p
10
0.1
1
10
100
Reverse Voltage (V)
Fig.6 Maximum Non-Repetitive Peak
Forward Surage Current
120
100
80
60
40
20
8.3 ms Single Half Sine Wave
(JEDEC Method)
00
1
10
100
Number of Cycles
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