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ES1ABF Datasheet, PDF (2/3 Pages) DONGGUAN YOU FENG WEI ELECTRONICS CO., LTD – Surface Mount Superfast Recovery Rectifier | |||
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ES1ABF THRU ES1JBF
Fig.1 Reverse Recovery Time Characteristic And Test Circuit Diagram
50 ohm
Noninductive
10 ohm
Noninductive
trr
+0.5
+
25Vdc
approx
-
1 ohm
NonInductive
D.U.T
PULSE
GENERATOR
Note 2
OSCILLOSCOPE
Note 1
0
-0.25
Noteï¼1.Rise Time = 7ns, max.
Input Impedance = 1megohm,22pF.
2. Ries Time =10ns, max.
Source Impedance = 50 ohms.
Fig.2 Maximum Average Forward Current Rating
1.2
1.0
0.8
0.6
0.4
Single phase half wave resistive
0.2 or inductive P.C.B mounted on
0.5Ã0.5"(12.7Ã12.7mm) pad areas.
0.0
25 50 75 100 125
150
175
Lead Temperature (°C)
Fig.4 Typical Forward Characteristics
10
TJ=25°C
1.0
0.1
0.01
ES1ABF~ES1DBF
ES1EBF/WS1GBF
ES1JBF
0.001
0
0.5
1.0
1.5
2.0
2.5
Instaneous Forward Voltage (V)
Fig.4 Maximum Non-Repetitive Peak
Forward Surage Current
40
30
20
-1.0
10ns/div
Set time Base for 10ns/div
Fig.3 Typical Reverse Characteristics
300
100
TJ=125°C
10
TJ=75°C
1.0
TJ=25°C
0.1
0
20
40
60
80
100
% of PIV.VOLTS
Fig.5 Typical Junction Capacitance
14
12
10
8
6
TJ=25°C
4
f = 1.0MHz
Vsig = 50mVp-p
2
0.1
1
10
100
Reverse Voltage (V)
10
8.3 ms Single Half Sine Wave
(JEDEC Method)
00
1
10
100
Number of Cycles
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