AO3406-SOT23-3L Datasheet, PDF (2/5 Pages) DONGGUAN YOU FENG WEI ELECTRONICS CO., LTD – N-Channel MOSFET

AO3406
■ Electrical Characteristics Ta = 25℃
Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
Gate Threshold Voltage
Static Drain-Source On-Resistance
On State Drain Current
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Maximum Body-Diode Continuous Current
Diode Forward Voltage
Symbol
Test Conditions
Min Typ Max Unit
VDSS ID=250μA, VGS=0V
30
V
VDS=30V, VGS=0V
IDSS
VDS=30V, VGS=0V, TJ=55℃
1
μA
5
IGSS
VDS=0V, VGS=±20V
±100 nA
VGS(th) VDS=VGS , ID=250μA
1.5 2 2.5 V
VGS=10V, ID=3.6A
36 50
RDS(On) VGS=10V, ID=3.6A TJ=125℃
57 80 mΩ
VGS=4.5V, ID=2.8A
48 70
ID(ON) VGS=10V, VDS=5V
15
A
gFS
VDS=5V, ID=3.6A
11
S
Ciss
170 210
Coss
VGS=0V, VDS=15V, f=1MHz
35
pF
Crss
23
Rg
VGS=0V, VDS=0V, f=1MHz
1.7 3.5 5.3 Ω
VGS=4.5V, VDS=15V, ID=3.6A
Qg
2
3
4.05 5
Qgs
VGS=10V, VDS=15V, ID=3.6A
0.55
nC
Qgd
1
td(on)
4.5
tr
1.5
VGS=10V, VDS=15V, RL=2.2Ω,RG=3Ω
td(off)
18.5
ns
tf
15.5
trr
IF= 3.6A, dI/dt= 100A/μs
Qrr
7.5 10
2.5
nC
IS
1.5 A
VSD
IS=1A,VGS=0V
0.79 1
V
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