US2A-SMB Datasheet, PDF (1/2 Pages) DONGGUAN YOU FENG WEI ELECTRONICS CO., LTD – High Efficiency Recovery rectifiers

US2A~US2M SMB
High Efficiency Recovery rectifiers
Major Ratings and Characteristics
I_F(AV)
2.0A
V_RRM
50 V to 1000 V
I_FSM
50 A
t_rr
50nS,75nS
V_F
1.0V,1.3V,1.7V
T_j max.
150 °C
Features
ƽ Low profile package
ƽ Ideal for automated placement
ƽ Glass passivated chip junctions
ƽ Ultrafast reverse recovery time
ƽ Low switching losses, high efficiency
ƽ High forward surge capability
ƽ High temperature soldering˖
260ć/10 seconds at terminals
ƽ Component in accordance to
RoHS 2002/95/1 and WEEE 2002/96/EC
Mechanical Date
ƽ Case: JEDEC DO-214AA molded plastic
body over passivated chip
ƽ Terminals: Solder plated, solderable per
J-STD-002B and JESD22-B102D
ƽ Polarity: Laser band denotes cathode end
Maximum Ratings & Thermal Characteristics & Electrical Characteristics
(T_A = 25 °C unless otherwise noted)
Symbol US2A US2B US2D US2G US2J US2K US2M UNIT
Maximum repetitive peak reverse voltage
V_RRM
50
Maximum RMS voltage
V_RMS
35
Maximum DC blocking voltage
V_DC
50
Maximum average forward rectified current
I_F(AV)
Peak forward surge current 8.3 ms single half sine-
wave superimposed on rated load
I_FSM
Maximum instantaneous forward voltage at 2.0A
V_F
Maximum DC reverse current
at Rated DC blocking voltage
T_A = 25 ć
T_A = 100ć
I_R
Maximum reverse recovery time
at I_F = 0.5 A , I_R = 1.0 A , I_rr = 0.25 A
t_rr
Typical junction capacitance at 4.0 V ,1MHz
C_J
Thermal resistance from junction to lead
R_șJL
Operating junction and storage temperature range T_J, T_STG
100 200 400 600
70 140 280 420
100 200 400 600
2
50
1.0
1.3
10.0
50
50
15
95
–55 to +150
800 1000 V
560 700 V
800 1000 V
A
A
1.7
V
ȝA
75
nS
pF
ć/W
ć