US2A-SMA Datasheet, PDF (1/2 Pages) DONGGUAN YOU FENG WEI ELECTRONICS CO., LTD – High Efficiency Recovery rectifiers

(US2A~US2M) SMA
High Efficiency Recovery rectifiers
Major Ratings and Characteristics
I_F(AV)
2.0A
V_RRM
I_FSM
50 V to 1000 V
50 A
t_rr
50 nS , 75 nS
V_F
1.0 V , 1.3 V , 1.7 V
T_j max.
150 °C
Features
Low profile package
Ideal for automated placement
Glass passivated chip junctions
Ultrafast reverse recovery time
Low switching losses, high efficiency
High forward surge capability
High temperature soldering
260 /10 seconds at terminals
Component in accordance to
RoHS 2002/95/1 and WEEE 2002/96/EC
Mechanical Date
Case: JEDEC DO-214AC molded plastic
body over passivated chip
Terminals: Solder plated, solderable per
J-STD-002B and JESD22-B102D
Polarity: Laser band denotes cathode end
Maximum Ratings & Thermal Characteristics & Electrical Characteristics
(TA = 25 °C unless otherwise noted)
Symbol ^(US2A) (US2B) (US2D) (US2G) (US2J) (US2K) (US2M) UNIT
Maximum repetitive peak reverse voltage
V_RRM 50
Maximum RMS voltage
V_RMS 35
Maximum DC blocking voltage
V_DC 50
Maximum average forward rectified current
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load
I_F(AV)
I_FSM
Maximum instantaneous forwad voltage at 2.0A V_F
Maximum DC reverse current
at Rated DC blocking voltage
T_A = 25
T_A = 100
I_R
Maximum reverse recovery time
at I_F = 0.5 A , I_R = 1.0 A , I_rr = 0.25 A
t_rr
Typical junction capacitance at 4.0 V ,1MHz
C_J
Thermal resistance from junction to ambient
Operating junction and storage
temperature range
R_θJA
T_J, T_STG
100 200 400 600
70 140 280 420
100 200 400 600
2
50
1.0
1.3
10.0
50
50
15
75
–55 to +150
800 1000 V
560 700 V
800 1000 V
A
A
1.7
V
μA
75
nS
pF
/W