S9015-SOT23 Datasheet, PDF (1/3 Pages) DONGGUAN YOU FENG WEI ELECTRONICS CO., LTD – PNP Transistors

S9015
PNP Transistors
Features
Complementary to S 9014
3
2
1.Base
2.Emitter
1
3.Collector
■ Simplified outline(SOT-23)
Absolute Maximum Ratings Ta = 25
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Symbol
Rating
Unit
VCBO
-50
V
VCEO
-45
V
VEBO
-5
V
IC
-0.1
A
PC
0.2
W
Tj
150
Tstg
-55 to 150
Electrical Characteristics Ta = 25
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base Breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Symbol
Testconditions
VCBO Ic=-100uA, IE=0
VCEO Ic=-1mA, IB=0
VEBO IE=-100 uA, I C=0
ICBO VCB=-50V, IE=0
IEBO VEB=-5V, IC=0
hFE VCE=-5V, IC=-1mA
VCE(sat) IC=-100mA, IB=-10mA
VBE(sat) IC=-100mA, IB=-10mA
fT VCE=-5V, IC=-10mA,f=30MHZ
Min Typ Max Unit
-50
V
-45
V
-5
V
-0.1
A
-0.1
A
200
1000
-0.3 V
-1
V
150
MHz
hFE Classification
Type
Range
Marking
S9015-L
S9015-H
200-450
450-1000
M6
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