MMBTH10-SOT23 Datasheet, PDF (1/4 Pages) DONGGUAN YOU FENG WEI ELECTRONICS CO., LTD – NPN Transistors

MMBTH10
NPN Transistors
■ Features
●Collector Current Capability IC=0.05 A
●Collector Emitter Voltage VCEO=25V
■ Classification of hfe
Marking
3EM
3
2
1.Base
2.Emitter
1
3.Collector
■ Simplified outline(SOT-23)
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Thermal Resistance Junction to Ambient
Junction Temperature
Storage Temperature Range
Symbol
VCBO
VCEO
VEBO
IC
PC
RθJA
TJ
Tstg
Rating
30
25
3
0.05
225
556
150
-55 to +150
Unit
V
A
mW
℃/W
℃
■ Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
Base - emitter saturation voltage
DC current gain
Collector output capacitance
Transition frequency
Symbol
VCBO
VCEO
VEBO
ICBO
IEBO
VCE(sat)
VBE(sat)
VBE
hFE
Cob
fT
Test Conditions
Ic= 100 μA， IE= 0
Ic= 1 mA， IB= 0
IE= 10μA， IC= 0
VCB=25 V , IE= 0
VEB= 2V , IC=0
IC=4 mA, IB=0.4mA
IC=4 mA, IB=0.4mA
VCE=10V,IC= 4 mA
VCE= 10V, IC= 4mA
VCB= 10V, IE= 0,f=1MHz
VCE= 10V, IC= 4mA,f=100MHz
Min Typ Max Unit
30
25
V
3
100
nA
100
0.5
1.2 V
0.95
60
0.7 pF
650
MHz
www.yfwdiode.com