MMBTA42-SOT23 Datasheet, PDF (1/3 Pages) DONGGUAN YOU FENG WEI ELECTRONICS CO., LTD – NPN Transistors

MMBTA42
NPN Transistors
■ Features
● High breakdown voltage
● Low collector-emitter saturation voltage
● Complementary to MMBTA92 (PNP)
3
2
1.Base
2.Emitter
1
3.Collector
■ Simplified outline(SOT-23)
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Thermal Resistance Junction to Ambient
Junction Temperature
Storage Temperature Range
Symbol
VCBO
VCEO
VEBO
IC
PC
RθJA
TJ
Tstg
Rating
300
300
5
500
350
357
150
-55 to 150
Unit
V
mA
mW
℃/W
℃
■ Electrical Characteristics Ta = 25℃
Parameter
Collector-base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain
Transition frequency
Symbol
Test Conditions
VCBO Ic= 100 μA， IE= 0
VCEO Ic= 1 mA， IB= 0
VEBO IE= 100 u A， IC= 0
ICBO VCB= 200 V , IE= 0
IEBO VEB= 5V , IC=0
VCE(sat) IC= 20 mA, IB= 2mA
VBE(sat) IC= 20mA, IB= 2mA
hfe（1） VCE= 10V, IC= 1mA
hfe（2） VCE= 10V, IC= 10mA
hfe（3） VCE= 10V, IC= 30mA
fT
VCE= 20V, IC= 10mA, f=30MHz
Min Typ Max Unit
300
300
V
5
0.1
uA
0.1
0.2
V
0.9
60
100
300
60
50
MHz
■ Classification of hfe(2)
Type
Range
Marking
MMBTA42
MMBTA42-L
100-300
100-200
1D
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