MMBT5551-SOT23 Datasheet, PDF (1/3 Pages) DONGGUAN YOU FENG WEI ELECTRONICS CO., LTD – NPN Transistors

MMBT5551
NPN Transistors
Features
High Voltage Transistors
Pb-Free Packages are Available
3
2
1.Base
2.Emitter
1
3.Collector
■ Simplified outline(SOT-23)
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current-continuous
Collector Power Dissipation
Junction and storage temperature
Symbol
Rating
Unit
VCBO
180
V
VCEO
160
V
VEBO
6
V
IC
0.6
A
Pc
300
mW
TJ, Tstg
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditions
Collector-base breakdown voltage
VCBO IC = 100uA, I E = 0
Collector-emitter breakdown voltage *
VCEO IC = 1.0 mA, IB = 0
Emitter-base breakdown voltage
VEBO IE = 10uA, I C = 0
Collector cutoff current
ICBO VCB = 120 V, IE = 0
Emitter cutoff current
IEBO VEB = 4.0 V, IC = 0
IC = 1.0 mA, VCE = 5 V
DC current gain *
hFE IC = 10 mA, VCE = 5 V
IC = 50 mA, VCE = 5 V
Collector-emitter saturation voltage *
VCE(sat) IC = 50 mA, IB = 5.0 mA
Base-emitter saturation voltage *
VBE(sat) IC = 50 mA, IB = 5.0 mA
Transiston frequency
fT VCE=10V,IC=10mA,f=100MHz
* Pulse Test: Pulse Width = 300 s, Duty Cycle=2.0%.
■ Classification of hfe(2)
Type
Range
Marking
MMBT5551
100-300
MMBT5551-L
100-200
G1
MMBT5551-H
200-300
Min Typ Max Unit
180
V
160
V
6
V
50 nA
50 nA
80
100
300
50
0.5 V
1.0 V
100
MHz
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