MMBT5401-SOT23 Datasheet, PDF (1/3 Pages) DONGGUAN YOU FENG WEI ELECTRONICS CO., LTD – PNP Transistors

MMBT5401
PNP Transistors
Features
High Voltage Transistors
Pb-Free Packages are Available
3
2
1.Base
2.Emitter
1
3.Collector
■ Simplified outline(SOT-23)
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current-continuous
Collector Power Dissipation
Junction and storage temperature
Symbol
Rating
Unit
VCBO
-160
V
VCEO
-150
V
VEBO
-5
V
IC
-0.6
A
Pc
300
mW
TJ, Tstg
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditions
Collector-base breakdown voltage
VCBO IC = -100 A, IE = 0
Collector-emitter breakdown voltage *
VCEO IC =- 1.0 mA, IB = 0
Emitter-base breakdown voltage
VEBO IE = -10 A, IC = 0
Collector cutoff current
ICBO VCB =- 120 V, IE = 0
Emitter cutoff current
IEBO VEB = -4.0 V, IC = 0
IC = -1.0 mA, VCE = -5 V
DC current gain *
hFE IC = -10 mA, VCE = -5 V
IC = -50 mA, VCE = -5 V
Collector-emitter saturation voltage *
VCE(sat) IC = -50 mA, IB = -5.0 mA
Base-emitter saturation voltage *
VBE(sat) IC = -50 mA, IB = -5.0 mA
Transiston frequency
fT VCE=-5V,IC=-10mA,f=30MHz
* Pulse Test: Pulse Width = 300 s, Duty Cycle=2.0%.
■ Classification of hfe(2)
Type
Range
Marking
MMBT5401
100-300
MMBT5401-L
100-200
2L
MMBT5401-H
200-300
Min Typ Max Unit
-160
V
-150
V
-5
V
-0.1
A
-0.1
A
80
100
300
50
-0.5 V
-1.0 V
100
MHz
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