MMBT4403-SOT23 Datasheet, PDF (1/3 Pages) DONGGUAN YOU FENG WEI ELECTRONICS CO., LTD – PNP Transistors

MMBT4403
PNP Transistors
■ Features
● Ideal for Medium Power Amplification and Switching
● Complementary NPN Type Available (MMBT4401)
■ Marking
Marking
2T
3
2
1.Base
2.Emitter
1
3.Collector
■ Simplified outline(SOT-23)
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Total Device Dissipation Alumina Substrate
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
PD
RθJA
TJ, Tstg
Rating
-40
-40
-5
-600
300
417
-55 to150
Unit
V
V
V
mA
mW
℃/W
℃
■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
Test conditions
Collector-base breakdown voltage
V(BR)CBO IC = 100μA, IE = 0
Collector-emitter breakdown voltage
V(BR)CEO IC = 1.0 mA, IB = 0
Emitter-base breakdown voltage
V(BR)EBO IE =100μA, IC = 0
Collector cut-off current
ICBO VCB=-35 V, IE=0
Emitter cut-off current
IEBO VEB=-4V, IC=0
DC current gain *
IC = -0.1 mA, VCE = -1.0 V
IC = -1.0 mA, VCE = -1.0 V
hFE IC = -10 mA, VCE = -1.0 V
IC = -150 mA, VCE = -2.0 V
IC = -500 mA, VCE = -2.0 V
Collector-emitter saturation voltage *
IC = -150 mA, IB = -15 mA
VCE(sat)
IC = -500 mA, IB = -50 mA
Base-emitter saturation voltage *
IC = 150 mA, IB = 15 mA
VBE(sat)
IC = 500 mA, IB = 50 mA
Transition frequency
fT
IC = 20 mA, VCE = 10 V, f = 100 MHz
Delay time
td
VCC = 30 V, VEB = 2.0 V,
Rise time
tr
IC = 150 mA, IB1 = 15 mA
Storage time
ts
VCC = 30 V, IC = 150 mA,
Fall time
tf
IB1 = IB2 = 15 mA
* Pulse test: pulse width ≤ 300 μs, duty cycle ≤ 2.0%.
Min Typ Max Unit
-40
V
-40
V
-5
V
-0.1 μA
-0.1 μA
30
60
100
100
300
20
-0.75
-0.4
V
-0.75
-0.95
V
-1.3
200
MHz
15
ns
20
ns
225 ns
30
ns
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