MMBT4401-SOT23 Datasheet, PDF (1/3 Pages) DONGGUAN YOU FENG WEI ELECTRONICS CO., LTD – PNP Transistors

MMBT4401
PNP Transistors
■ Features
● Ideal for Medium Power Amplification and Switching
● Complementary PNP Type Available (MMBT4403)
■ Marking
Marking
2X
3
2
1.Base
2.Emitter
1
3.Collector
■ Simplified outline(SOT-23)
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Total Device Dissipation Alumina Substrate
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
PD
RθJA
TJ, Tstg
Rating
60
40
6.0
600
300
417
-55 to150
Unit
V
V
V
mA
mW
℃/W
℃
■ Electrical Characteristics Ta = 25℃
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain *
Collector-emitter saturation voltage *
Base-emitter saturation voltage *
Transition frequency
Delay time
Rise time
Storage time
Fall time
Symbol
Test conditions
V(BR)CBO IC = 100μA, IE = 0
V(BR)CEO IC = 1.0 mA, IB = 0
V(BR)EBO IE =100μA, IC = 0
ICBO VCB=50 V, IE=0
IEBO VEB=5V, IC=0
IC = 0.1 mA, VCE = 1.0 V
IC = 1.0 mA, VCE = 1.0 V
hFE IC = 10 mA, VCE = 1.0 V
IC = 150 mA, VCE = 1.0 V
IC = 500 mA, VCE = 2.0 V
IC = 150 mA, IB = 15 mA
VCE(sat)
IC = 500 mA, IB = 50 mA
IC = 150 mA, IB = 15 mA
VBE(sat)
IC = 500 mA, IB = 50 mA
fT
IC = 20 mA, VCE = 10 V, f = 100 MHz
td
VCC = 30 V, VEB = 2.0 V,
tr
IC = 150 mA, IB1 = 15 mA
ts
VCC = 30 V, IC = 150 mA,
tf
IB1 = IB2 = 15 mA
* Pulse test: pulse width ≤ 300 μs, duty cycle ≤ 2.0%.
Min Typ Max Unit
60
V
40
V
6.0
V
0.1 μA
0.1 μA
20
40
80
100
300
40
0.4
V
0.75
0.75
0.95
V
1.2
250
MHz
15 ns
20 ns
225 ns
30 ns
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