MMBT3904-SOT23 Datasheet, PDF (1/3 Pages) DONGGUAN YOU FENG WEI ELECTRONICS CO., LTD – NPN Transistors

MMBT3904
NPN Transistors
3
Features
● Complementary to MMBT3906
● Marking:1AM
2
1.Base
2.Emitter
1
3.Collector
■ Simplified outline(SOT-23)
Absolute Maximum Ratings Ta = 25
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Symbol
Rating
Unit
VCBO
60
V
VCEO
40
V
VEBO
6
V
IC
0.2
A
PC
0.2
W
TJ
150
Tstg
-55 to 150
Electrical Characteristics Ta = 25
Parameter
Collector-base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Collector- emitter cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain
Delay time
Rise time
Storage time
Fall time
Collector input capacitance
Collector output capacitance
Transition frequency
Symbol
Test Conditions
Min Typ Max Unit
VCBO
VCEO
Ic= 100 μA， IE= 0
Ic= 1 mA， IB= 0
60
40
V
VEBO IE= 100μA， IC= 0
6
ICBO VCB= 60 V , IE= 0
100
ICEX VCE= 30 V , VEB(off）=- 3V
50 nA
IEBO VEB= 5V , IC=0
100
VCE(sat)
VBE(sat)
IC= 10 mA, IB= 1mA
IC= 50 mA, IB= 5mA
IC= 10 mA, IB= 1mA
IC= 50 mA, IB= 5mA
0.2
0.3
V
0.65
0.85
0.95
hfe（1） VCE= 1V, IC= 10mA
100
400
hfe（2） VCE= 1V, IC= 50mA
60
hfe（3） VCE= 1V, IC= 100mA
30
td
VCC= 3V, VBE(off)=- 0.5V
35
tr
IC= 10mA, IB1= 1mA
ts
VCC= 3V, IC= 10mA
35
ns
200
tf
IB1=IB2= 1mA
50
Cib VEB= 0.5V, IE= 0,f=1MHz
Cob VCB= 5V, IE= 0,f=1MHz
8
pF
4
fT VCE= 20V, IC= 10mA,f=100MHz 300
MHz
■ Classification of hfe(1)
Type
MMBT3904
Range
100-300
MMBT3904-L MMBT3904-H MMBT3904-J
100-200
200-300
300-400
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