MMBT2907A-SOT23 Datasheet, PDF (1/3 Pages) DONGGUAN YOU FENG WEI ELECTRONICS CO., LTD – PNP Transistors

MMBT2907A
PNP Transistors
3
■
●
●
■ Marking
Marking
2F
2
1.Base
2.Emitter
1
3.Collector
■ Simplified outline(SOT-23)
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Power Dissipation
Thermal resistance from junction to ambient
Junction Temperature
Storage Temperature Range
Symbol
VCBO
VCEO
VEBO
IC
PD
RθJA
TJ
Tstg
Rating
-60
-60
-5
600
250
500
150
-55 to 150
Unit
V
mA
mW
℃/W
℃
■ Electrical Characteristics Ta = 25℃
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage*
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Collector Cutoff Current
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
ICEX
DC Current Gain
hFE
Collector-Emitter Saturation Voltage *
VCE(sat)
Base-Emitter Saturation Voltage *
VBE(sat)
Current Gain - Bandwidth Product
fT
Delay Time
td
Rise Time
tr
Storage Time
ts
Fall Time
tf
* Pulse test: Pulse width ≤ 300 μs, duty cycle ≤ 2.0%
Test conditions
IC = -100 μA, IE = 0
IC = -10 mA, IB = 0
IE = -100μA, IC = 0
VCB = -50 V, IE = 0
VCE = -30 V,VEB(off) =0.5V
VCE=-10V,IC=-0.1mA
VCE=-10V,IC=-1mA
VCE=-10V,IC=-10mA
VCE=-10V,IC=-150mA
VCE=-10V,IC=-500mA
IC = -150 mA, IB = -15 mA
IC = -500 mA, IB = -50 mA
IC = -150 mA, IB = -15 mA
IC = -500 mA, IB = -50 mA
VCE=-20V,IC=-50mA,f=100MHz
VCC = -30 V, IC = -150 mA,IB1 = -15 mA
VCC = -6.0 V, IC = -150 mA,IB1 = IB2 = -15
mA
Min Max Unit
-60
V
-60
V
-5
V
-20 nA
-50 nA
75
100
100
100 300
50
-0.4 V
-1.6 V
-1.3 V
-2.6 V
200
MHz
10 ns
40 ns
80 ns
30 ns
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