MMBT2222A-SOT23 Datasheet, PDF (1/3 Pages) DONGGUAN YOU FENG WEI ELECTRONICS CO., LTD – NPN Transistors

MMBT2222A
NPN Transistors
3
■
●
●
)
■ Mrarking
Marking
1P
2
1.Base
2.Emitter
1
3.Collector
■ Simplified outline(SOT-23)
■ Absolute Maximum Ratin gs Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Power Dissipation
Thermal resistance from junction to ambient
Junction Temperature
Storage Temperature Range
Symbol
VCBO
VCEO
VEBO
IC
PD
RθJA
TJ
Tstg
Rating
70
40
6
600
250
417
150
-55 to 150
Unit
V
mA
mW
℃/W
℃
■ Electrical Characteristics Ta = 25℃
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector cutoff current
Collector cut-off current
Emitter cutoff current
DC current gain
Symbol
Test conditions
V(BR)CBO IC = 100 μA, IE = 0
V(BR)CEO IC = 10 mA, IB = 0
V(BR)EBO IE = 100 μ A, IC = 0
ICBO VCB=60V, IE=0
ICEX VCE=30V,VEB(off)=-3V
IEBO VEB= 3V, IC=0
VCE=10V, IC= 0.1mA
hFE VCE=10V, IC= 150mA
VCE=10V, IC= 500mA
collector-emitter saturation voltage *
base-emitter saturation voltage *
Transition frequency
Delay time
Rise time
Storage time
Fall time
VCE(sat)
VBE(sat)
fT
td
tr
ts
tf
IC = 150 mA; IB = 15 mA
IC = 500 mA; IB = 50 mA
IC = 150 mA; IB = 15 mA
IC = 500 mA; IB = 50 mA
IC = 20 mA; VCE = 20 V; f = 100 MHz
VCC=30V, VBE(off)=-0.5V,
IC=150mA , IB1= 15mA
VCC=30V, IC=150mA,IB1=-IB2=15mA
* pulse test: Pulse Width ≤300μs, Duty Cycle≤ 2.0%.
Min Typ Max Unit
75
V
40
V
6
V
100 nA
10 nA
100 nA
40
100
300
42
0.3
V
1
V
0.6
1.2
V
2
V
300
MHz
10 ns
25 ns
225 ns
60 ns
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