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G1003A-SOT23-3L Datasheet, PDF (1/5 Pages) DONGGUAN YOU FENG WEI ELECTRONICS CO., LTD – High density cell design for ultra low Rdson
G1003A
■ Description
The G1003A uses advanced trench technology and
design to provide excellent RDS(ON) with low gate charge. It
can be used in a wide variety of applications.
It is ESD protected.
■ General Features
●
VDSS RDS(ON) ID
@ 10V (typ)
100V
135mΩ
5A
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Excellent package for good heat dissipation
■ Application
● Power switching application
● Hard switched and high frequency circuits
● Uninterruptible power supply
■ Marking
Marking
G1003A
D
S
G
■ Simplified outline(SOT23-3L)
D
G
S
■ Schematic diagram
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Pulsed (Note 1)
IDM
Maximum Power Dissipation
PD
Operating Junction and Storage Temperature Range
TJ,TSTG
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
Limit
100
±20
5
24
3
-55 To 150
41.7
Unit
V
V
A
A
W
℃
℃ /W
Electrical Characteristics (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
Off Characteristics
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=250µA
Zero Gate Voltage Drain Current
IDSS
VDS=80V, VGS=0V
Min Typ Max Unit
100 105
-
V
-
-
800
nA
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