ES1A-SMA Datasheet, PDF (1/2 Pages) DONGGUAN YOU FENG WEI ELECTRONICS CO., LTD – Major Ratings and Characteristics

(ES1A~ES1J)SMA
Super Fast recovery rectifiers
Major Ratings and Characteristics
I_F(AV)
1.0 A
V_RRM
50 V to 600 V
I_FSM
30 A
t_rr
35 nS
V_F
0.95 V, 1.3 V, 1.7 V
T_j max.
150 °C
Features
ƽ Glass passivated chip junction
ƽ Ideal for automated placement
ƽ Ultrafast reverse recovery time for high efficiency
ƽ Low profile package
ƽ High forward surage capability
ƽ High temperatrue soldering˖
260ć/10 seconds at terminals
ƽ Component in accordance to RoHS 2002/95/1
and WEEE 2002/96/EC
Mechanical Date
ƽ Case: JEDEC DO-214AC molded plastic
body over passivated chip
ƽ Terminals: Solder plated, solderable per
J-STD-002B and JESD22-B102D
ƽ Polarity: Laser band denotes cathode end
Maximum Ratings & Thermal Characteristics & Electrical Characteristics
(TA = 25 °C unless otherwise noted)
Symbol _{(ES1A) (ES1A) (ES1D) (ES1G) (ES1J)} UNIT
Maximum repetitive peak reverse voltage
V_RRM
50
Maximum RMS voltage
V_RMS
35
Maximum DC blocking voltage
V_DC
50
Maximum average forward rectified current
I_F(AV)
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC Method)
I_FSM
Maximum instantaneous forwad voltage at 1.0A
V_F
Maximum DC reverse current
at Rated DC blocking voltage
TA = 25 ć
TA = 100ć
I_R
Maximum reverse recovery time
at I_F = 0.5 A , I_R = 1.0 A , I_rr = 0.25 A
t_rr
Typical junction capacitance at 4.0 V ,1MHz
C_J
Typical thermal resistance
Operating junction and storage temperature range
R_șJA
T_J, T_STG
100 200 400
70 140 280
100 200 400
1
30
0.95
1.30
5.0
100
35
15
75
–55 to +150
600 V
420 V
600 V
A
A
1.70 V
μA
μA
nS
pF
ć/ W
ć