DS22W Datasheet, PDF (1/3 Pages) DONGGUAN YOU FENG WEI ELECTRONICS CO., LTD – Surface MountSchottky Barrier Rectifier

Surface Mount Schottky Barrier Rectifier
Reverse Voltage - 20 to 200 V
Forward Current - 2.0A
Features
• Metal silicon junction, majority carrier conduction
• For surface mounted applications
• Low power loss, high efficiency
• High forward surge current capability
• For use in low voltage, high frequency inverters,
free wheeling, and polarity protection applications
MECHANICAL DATA
• Case: SOD-123FL
• Terminals: Solderable per MIL-STD-750, Method 2026
• Approx. Weight:15mg 0.00048oz
DS22W THRU DS220W
PINNING
PIN
DESCRIPTION
1
Cathode
2
Anode
1
S220
2
Top View
Marking Code: DS22W ---K22
DS24W ---K24
DS26W ---K26
DS28W ---K28
DS210W ---K210
DS212W ---K212
DS215W ---K215
DS220W ---K220
Simplified outline SOD-123FL and symbol
Absolute Maximum Ratings and Electrical characteristics
Ratings at 25 °C ambient temperature unless otherwise specified.Single phase, half wave, 60Hz resistive or inductive load,
for capacitive load, derate by 20 %
Parameter
Symbols DS22W DS24W DS26W DS28W DS210W DS212W DS215W DS220W Units
Maximum Repetitive Peak Reverse Voltage
VRRM
20
40
60
80
100 120 150 200
V
Maximum RMS voltage
VRMS
14
28
42
56
70
84
105 140
V
Maximum DC Blocking Voltage
VDC
20
40
60
80
100 120 150 200
V
Maximum Average Forward Rectified Current
I F ( AV )
2.0
A
Peak Forward Surge Current,8.3ms
Single Half Sine-wave Superimposed
IFSM
50
on Rated Load (JEDEC method)
40
A
Max Instantaneous Forward Voltage at 2 A
VF
0.55
0.70
0.85
0.95
V
Maximum DC Reverse Current Ta = 25°C
at Rated DC Reverse Voltage _{Ta =100°C}
IR
Typical Junction Capacitance ^1）
Cj
Operating Junction Temperature Range
Tj
0.5
5
220
0.3
5
80
-55 ~ +125
mA
pF
°C
Storage Temperature Range
Tstg
-55 ~ +150
°C
1） Measured at 1MHz and applied reverse voltage of 4 V D.C.