DS12W Datasheet, PDF (1/3 Pages) DONGGUAN YOU FENG WEI ELECTRONICS CO., LTD – Surface Mount Schottky Barrier Rectifier

Surface Mount Schottky Barrier Rectifier
Reverse Voltage - 20 to 200 V
Forward Current - 1.0 A
FEATURES
• Metal silicon junction, majority carrier conduction
• For surface mounted applications
• Low power loss, high efficiency
• High forward surge current capability
• For use in low voltage, high frequency inverters,
free wheeling, and polarity protection applications
MECHANICAL DATA
• Case: SOD-123FL
• Terminals: Solderable per MIL-STD-750, Method 2026
• Approx. Weight:15mg 0.00048oz
DS12W THRU DS120W
PINNING
PIN
DESCRIPTION
1
Cathode
2
Anode
1
2
Top View
Marking Code: DS12W ---K12
DS14W ---K14
DS16W ---K16
DS18W ---K18
DS110W ---K110
DS112W ---K112
DS115W ---K115
DS120W ---K120
Simplified outline SOD-123FL and symbol
Absolute Maximum Ratings and Electrical characteristics
Ratings at 25 °C ambient temperature unless otherwise specified.Single phase, half wave, 60Hz resistive or inductive load,
for capacitive load, derate by 20 %
Parameter
Symbols DS12W DS14W DS16W DS18W DS110W DS112W DS115W DS120W Units
Maximum Repetitive Peak Reverse Voltage
VRRM
20
40
60
80
100 120 150 200
V
Maximum RMS voltage
VRMS
14
28
42
56
70
84
105 140
V
Maximum DC Blocking Voltage
VDC
20
40
60
80
100 120 150 200
V
Maximum Average Forward Rectified Current
I F ( AV )
1.0
A
Peak Forward Surge Current,8.3ms
Single Half Sine-wave Superimposed
IFSM
40
on Rated Load (JEDEC method)
30
A
Max Instantaneous Forward Voltage at 1 A
VF
0.55
0.70
0.85
0.90
V
Maximum DC Reverse Current Ta = 25°C
at Rated DC Reverse Voltage _{Ta =100°C}
IR
0.3
10
0.2
5
0.1
2
mA
Typical Junction Capacitance ^1）
Typical Thermal Resistance ^2）
Operating Junction Temperature Range
Cj
RθJA
Tj
110
80
115
-55 ~ +125
pF
°C/W
°C
Storage Temperature Range
Tstg
-55 ~ +150
°C
1） Measured at 1MHz and applied reverse voltage of 4 V D.C.
2） P.C.B. mounted with 0.2 X 0.2" (5 X 5 mm) copper pad areas.