DS12W-SOD123FL Datasheet, PDF (1/3 Pages) DONGGUAN YOU FENG WEI ELECTRONICS CO., LTD – Surface Mount Schottky Barrier Rectifier

Surface Mount Schottky Barrier Rectifier
Reverse Voltage - 20 to 200 V
Forward Current - 1.0 A
FEATURES
• Metal silicon junction, majority carrier conduction
• For surface mounted applications
• Low power loss, high efficiency
• High forward surge current capability
• For use in low voltage, high frequency inverters,
free wheeling, and polarity protection applications
MECHANICAL DATA
• Case: SOD-123FL
• Terminals: Solderable per MIL-STD-750, Method 2026
• Approx. Weight:15mg 0.00048oz
DS12W THRU DS120W
PINNING
PIN
DESCRIPTION
1
Cathode
2
Anode
1
2
Top View
Marking Code: DS12W ---K12 S12
DS14W ---K14 S14
DS16W ---K16 S16
DS18W ---K18 S18
DS110W ---K110 S110
DS112W ---K112 S112
DS115W ---K115 S115
DS120W ---K120 S120
Simplified outline SOD-123FL and symbol
Absolute Maximum Ratings and Electrical characteristics
Ratings at 25 °C ambient temperature unless otherwise specified.Single phase, half wave, 60Hz resistive or inductive load,
for capacitive load, derate by 20 %
Parameter
Symbols DS12W DS14W DS16W DS18W DS110W DS112W DS115W DS120W Units
Maximum Repetitive Peak Reverse Voltage
VRRM
20
40
60
80
100 120 150 200
V
Maximum RMS voltage
VRMS
14
28
42
56
70
84
105 140
V
Maximum DC Blocking Voltage
VDC
20
40
60
80
100 120 150 200
V
Maximum Average Forward Rectified Current
I F ( AV )
1.0
A
Peak Forward Surge Current,8.3ms
Single Half Sine-wave Superimposed
IFSM
40
on Rated Load (JEDEC method)
30
A
Max Instantaneous Forward Voltage at 1 A
VF
0.55
0.70
0.85
0.90
V
Maximum DC Reverse Current Ta = 25°C
at Rated DC Reverse Voltage _{Ta =100°C}
（1）
Typical Junction Capacitance
（2）
Typical Thermal Resistance
Operating Junction Temperature Range
IR
Cj
RθJA
Tj
0.3
10
110
0.2
5
80
100
-55 ~ +150
0.1
mA
2
pF
°C/W
°C
Storage Temperature Range
Tstg
-55 ~ +150
°C
（1）Measured at 1 MHz and applied reverse voltage of 4 V D.C
（2）P.C.B. mounted with 2.0" X 2.0" (5 X 5 cm) copper pad areas.
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