BC857AT-BT-CT-SOT523 Datasheet, PDF (1/2 Pages) DONGGUAN YOU FENG WEI ELECTRONICS CO., LTD – PNP Transistors

BC857T
PNP Transistors
■ Features
● Ideally suited for automatic insertion
● For Switching and AF Amplifier Applications
3
2
1
1.Base
2.Emitter
3.Collector
■ Simplified outline(SOT-523)
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature range
℃
■ Electrical Characteristics Ta = 25
Symbol
VCBO
VCEO
VEBO
IC
PC
TJ
Tstg
Rating
-50
-45
-6
-0.1
150
150
-55 to 150
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
Base-emitter voltage
DC current gain
Symbol
VCBO
VCEO
VEBO
ICBO
IEBO
VCE(sat)
VBE(sat)
VBE(on)
hFE
Test Conditions
Ic= -100 μA， IE=0
Ic= -10 mA， IB=0
IE= -100μA， IC=0
VCB= -50 V , IE=0
VEB= -6V , IC=0
IC=-10 mA, IB=-0.5mA
IC=-100 mA, IB=-5mA
IC=-10 mA, IB=-0.5mA
IC=-100 mA, IB=-5mA
VCE= -5V, IC= -2mA
VCE= -5V, IC= -10mA
VCE= -5V, IC= -2mA
Noise figure
NF
VCE=-5V,f=1MHz,Ic=0.2mA
Rs=2KΩ,BW=200HZ
Collector output capacitance
Transition frequency
Cob VCB= -10V,f=1MHz
fT
VCE= -5 V,IC=-10mA,f=100MHz
Unit
V
A
mW
℃
Min Typ Max Unit
-50
-45
V
-6
-0.1 uA
-0.1 uA
-0.3
-0.65
-0.7
V
-0.9
-0.6
-0.75
-0.82
125
800
10 dB
4.5 pF
100
MHz
■ Classification of hfe
Type
BC857AT
Range
125-250
Marking
3E
BC857BT
220-475
3F
BC857CT
420-800
3G
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