BC847AT-BT-CT-SOT523 Datasheet, PDF (1/3 Pages) DONGGUAN YOU FENG WEI ELECTRONICS CO., LTD – NPN Transistors

BC847T
NPN Transistors
3
■ Features
● Ideally suited for automatic insertion
● For Switching and AF Amplifier Applications
2
1
1.Base
2.Emitter
3.Collector
■ Simplified outline(SOT-523)
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Symbol
Rating
Unit
Collector - Base Voltage
Collector - Emitter Voltage
VCBO
50
VCEO
45
V
Emitter - Base Voltage
VEBO
6
Collector Current - Continuous
IC
0.1
A
Collector Power Dissipation
PC
150
mW
Junction Temperature
Storage Temperature range
TJ
150
℃
Tstg
-55 to 150
■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Collector- base breakdown voltage
VCBO Ic= 100 μA， IE=0
50
Collector- emitter breakdown voltage
VCEO Ic= 10 mA， IB=0
45
V
Emitter - base breakdown voltage
VEBO IE= 100μA， IC=0
6
Collector-base cut-off current
ICBO VCB= 30 V , IE=0
15 nA
Emitter cut-off current
IEBO VEB= 6V , IC=0
0.1 uA
Collector-emitter saturation voltage
IC=10 mA, IB=0.5mA
VCE(sat)
IC=100 mA, IB=5mA
0.25
0.6
Base - emitter saturation voltage
IC=10 mA, IB=0.5mA
VBE(sat)
IC=100 mA, IB=5mA
0.7
V
0.9
Base-emitter voltage
VBE(on)
VCE= 5V, IC= 2mA
VCE= 5V, IC= 10mA
0.58
0.7
0.77
BC847AT
110
220
DC current gain
BC847BT
hFE VCE= 5V, IC= 2mA
200
450
BC847CT
420
800
Noise figure
BC847AT/BT
BC847CT
NF
VCE=5V,f=1MHz,Ic=0.2mA
Rs=2KΩ,BW=200HZ
10
dB
4
Collector output capacitance
Cob VCB= 10V,f=1MHz
4.5 pF
Transition frequency
fT
VCE= 5 V, IC=10mA,f=100MHz 100
MHz
■ Classification of hfe
Type
BC847AT
Range
110-220
Marking
1E
BC847BT
200-450
1F
BC847CT
420-800
1G
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