BC807-16-25-40-SOT23 Datasheet, PDF (1/3 Pages) DONGGUAN YOU FENG WEI ELECTRONICS CO., LTD – PNP Transistors

BC807
PNP Transistors
■ Features
● Ldeally suited for automatic insertion
● Epitaxial planar die construction
● Complementary NPN type available(BC817)
3
2
1.Base
2.Emitter
1
3.Collector
■ Simplified outline(SOT-23)
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature range
Symbol
Rating
Unit
VCBO
-50
VCEO
-45
V
VEBO
-5
IC
-0.5
A
PC
0.3
W
TJ
150
℃
Tstg
-55 to 150
■ Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Collector- emittercut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain
Transition frequency
Symbol
Test Conditions
VCBO Ic= -100 uA，IE=0
VCEO Ic= -10 mA， IB=0
VEBO IE= -100 uA，IC= 0
ICBO VCB= -45 V , IE=0
ICEO VCE=- 40 V , IB=0
IEBO VEB= -4V , IC=0
VCE(sat) IC=-500 mA, IB=- 50mA
VBE(sat) IC= -500 mA, IB= -50mA
hfe（1） VCE= -1V, IC= -100mA
hfe（2） VCE= -1V, IC= -500mA
fT
VCE= -5V, IC= -10mA,f=100MHz
■ Classification of hfe(1)
Rank
Range
Marking
BC807-16
100-250
5A
BC807-25
160-400
5B
BC807-40
250-630
5C
Min Typ Max Unit
-50
-45
V
-5
-0.1
-0.2 uA
-0.1
-0.7
V
-1.2
100
630
40
100
MHz
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