AO3402-SOT23-3L Datasheet, PDF (1/5 Pages) DONGGUAN YOU FENG WEI ELECTRONICS CO., LTD – N-Channel Enhancement MOSFET

AO3402
N-Channel Enhancement MOSFET
Features
VDS (V) = 30V
ID = 4 A
RDS(ON) 55m (VGS = 10V)
RDS(ON) 70m (VGS = 4.5V)
RDS(ON) 110m (VGS = 2.5V)
Marking
Marking
A2**
3
2
1. Gate
1
2. Source
3. Drain
■ Simplified outline(SOT23-3L)
D
G
S
Absolute Maximum Ratings Ta = 25
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current TA=25
TA=70
Pulsed Drain Current
Power Dissipation TA=25
TA=70
Thermal Resistance.Junction-to-Ambient
Thermal Resistance.Junction-to-Case
Junction and Storage Temperature Range
Symbol
VDS
VGS
ID
IDM
PD
R JA
R JC
TJ, TSTG
Rating
30
12
4
3.4
15
1.4
1
125
80
-55 to 150
Unit
V
V
A
W
/W
/W
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