AO3401-SOT23-3L Datasheet, PDF (1/5 Pages) DONGGUAN YOU FENG WEI ELECTRONICS CO., LTD – P-Channel Enhancement MOSFET

AO3401
P-Channel Enhancement MOSFET
■ Features
● VDS (V) =-30V
● ID =-4.2 A (VGS =-10V)
● RDS(ON) ＜ 50mΩ (VGS =-10V)
● RDS(ON) ＜ 65mΩ (VGS =-4.5V)
● RDS(ON) ＜ 120mΩ (VGS =-2.5V)
■ Marking
Marking
X1DV
3
2
1. Gate
1
2. Source
3. Drain
■ Simplified outline(SOT23-3L)
D
G
S
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Ta = 25℃
Ta = 70℃
Pulsed Drain Current
Power Dissipation
Ta = 25℃
Ta = 70℃
Thermal Resistance.Junction- to-Ambient t ≤ 10s
Thermal Resistance.Junction- to-Ambient
Thermal Resistance.Junction- to-Case
Junction Temperature
Junction and Storage Temperature Range
Symbol
VDS
VGS
ID
IDM
PD
RthJA
RthJC
TJ
Tstg
Rating
-30
±12
-4.2
-3.5
-30
1.4
1
90
125
60
150
-55 to 150
Unit
V
A
W
℃/W
℃
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