AO3400-SOT23-3L Datasheet, PDF (1/5 Pages) DONGGUAN YOU FENG WEI ELECTRONICS CO., LTD – N-Channel Enhancement MOSFET

AO3400
N-Channel Enhancement MOSFET
Features
VDS (V) = 30V
ID = 5.8 A (VGS = 10V)
RDS(ON) 28m (VGS = 10V)
RDS(ON) 33m (VGS = 4.5V)
RDS(ON) 52m (VGS = 2.5V)
Marking
Marking
XORB
3
2
1. Gate
1
2. Source
3. Drain
■ Simplified outline(SOT23-3L)
D
G
S
Absolute Maximum Ratings Ta = 25
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
TA=25
TA=70
Pulsed Drain Current *
Power Dissipation
TA=25
TA=70
Thermal Resistance.Junction- to-Ambient
Thermal Resistance.Junction- to-Case
Junction and Storage Temperature Range
Symbol
VDS
VGS
ID
IDM
PD
RthJA
Rthc
TJ, TSTG
* Repetitive rating, pulse width limited by junction temperature.
Rating
30
12
5.8
4.9
30
1.4
1
125
60
-55 to 150
Unit
V
V
A
W
/W
/W
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