8A45SB-SMBF Datasheet, PDF (1/3 Pages) DONGGUAN YOU FENG WEI ELECTRONICS CO., LTD – Trench MOS Barrier Schottky Rectifier

8A45SB
8A45SP
Trench MOS Barrier Schottky Rectifier
SMB-FL
8A45SB
TO-277
8A45SP
Features
• Advanced trench technology
• Low forward voltage drop
• Low power losses
• High efficiency operation
• Lead Free Finish, RoHS Compliant
Applications
• DC/DC Converters
• AC/DC Adaptors
Cathode
3
1
Anode
2
Maximum ratings and electrical characteristics (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Limit
Unit
Maximum repetitive peak reverse voltage
VRRM
45
V
Maximum average forward rectified current
IF(AV)
8
A
Peak forward surge current 8.3 ms single half
IFSM
150
A
sine-wave superimposed on rated load per diode
Operating junction and storage temperature range
TJ, TSTG
-40 to +150
°C
Typical thermal resistance per diode
(Mounted on FR-4 PCB)
SMB-FL
TO-277
RƟJL
20
72
TYP.
MAX.
°C/W
IF=2A TJ=25°C
0.4
-
Instantaneous forward voltage IF=2A TJ=125°C
VF(1)
0.29
-
V
IF=8A TJ=25°C
0.51
0.53
IF=8A TJ=125°C
0.40
-
Instantaneous reverse current per diode TJ=25°C
IR(2)
5
at rated reverse voltage
TJ=125°C
-
50
uA
10
mA
Notes:
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width ≦ 40 ms
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