6L60SB-SMBF Datasheet, PDF (1/3 Pages) DONGGUAN YOU FENG WEI ELECTRONICS CO., LTD – Trench MOS Barrier Schottky Rectifier

6L60SB
6L60SP
Trench MOS Barrier Schottky Rectifier
SMB-FL

6L60SB
TO-277

6L60SP

Features
• Advanced trench technology
• Low forward voltage drop
• Low power losses
• High efficiency operation
• Lead Free Finish, RoHS Compliant
Applications
• DC/DC Converters
• AC/DC Adaptors









Maximum ratings and electrical characteristics (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Limit
Maximum repetitive peak reverse voltage
VRRM
60
Maximum average forward rectified current
IF(AV)
6
Peak forward surge current 8.3 ms single half
IFSM
150
sine-wave superimposed on rated load per diode
Operating junction and storage temperature range
TJ, TSTG
-40 to +150
Typical thermal resistance per diode
SMB-FL
20
RƟJL
(Mounted on FR-4 PCB)
TO-277
72
TYP.
MAX.
IF=2A TJ=25°C
0.42
-
Instantaneous forward voltage
IF=2A TJ=125°C
VF(1)
0.32
-
IF=6A TJ=25°C
0.49
0.53
IF=6A TJ=125°C
0.41
-
Instantaneous reverse current per diode
TJ=25°C
12
50
IR(2)
at rated reverse voltage
TJ=125°C
-
15
Notes:
(1) Pulse test: 300 µs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width
40 ms
Unit
V
A
A
°C
°C/W
V
uA
mA
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