5V100-DO-201AD Datasheet, PDF (1/3 Pages) DONGGUAN YOU FENG WEI ELECTRONICS CO., LTD – Trench MOS Barrier Schottky Rectifier

5V100 DO-^2^ 01AD
Trench MOS Barrier Schottky Rectifier
DO-201AD
5V100
Features
• Advanced trench technology
• Low forward voltage drop
• Low power losses
• High efficiency operation
• Lead Free Finish, RoHS Compliant
Applications
• DC/DC Converters
• AC/DC Adaptors
Cathode
Anode
Maximum ratings and electrical characteristics (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Limit
Unit
Maximum repetitive peak reverse voltage
Maximum average forward rectified current
VRRM
100
V
IF(AV)
5
A
Peak forward surge current 8.3 ms single half
IFSM
sine-wave superimposed on rated load per diode
200
A
Operating junction and storage temperature range
TJ, TSTG
-40 to +150
°C
Typical thermal resistance per diode
(Mounted on FR-4 PCB)
RƟJC
22
°C/W
TYP.
MAX.
IF=2A TJ=25°C
0.49
-
Instantaneous forward voltage IF=2A TJ=125°C
VF(1)
0.36
-
V
IF=5A
IF=5A
TJ=25°C
TJ=125°C
-
0.54
0.48
-
Instantaneous reverse current per diode TJ=25°C
IR(2)
-
60
uA
at rated reverse voltage
TJ=125°C
-
40
mA
Notes:
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width ≦ 40 ms
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