5L100AF-SMAF Datasheet, PDF (1/3 Pages) DONGGUAN YOU FENG WEI ELECTRONICS CO., LTD – Trench MOS Barrier Schottky Rectifier

5L100AF _{}
Trench MOS Barrier Schottky Rectifier
SMAF
1
Cathode
2
Anode
Cathode 3
1
Anode
2
Features
• Advanced trench technology
• Low forward voltage drop
• Low power losses
• High efficiency operation
• Lead Free Finish, RoHS Compliant
Applications
• DC/DC Converters
• AC/DC Adaptors
Maximum ratings and electrical characteristics (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Limit
Unit
Maximum repetitive peak reverse voltage
VRRM
100
V
Maximum average forward rectified current
IF(AV)
5
A
Peak forward surge current 8.3 ms single half
IFSM
100
A
sine-wave superimposed on rated load per diode
Operating junction and storage temperature range
TJ, TSTG
-40 to +150
°C
Typical thermal resistance per diode(Mounted on FR-4 PCB) RƟJA
150
°C/W
TYP.
MAX.
IF=5A TJ=25°C
-
0.78
Instantaneous forward voltage
VF(1)
V
per diode
IF=5A TJ=125°C
0.65
0.69
Instantaneous reverse current per diode TJ=25°C
-
IR(2)
at rated reverse voltage
TJ=125°C
5
Notes:
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width ≦ 40 ms
200
uA
15
mA
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