2SK3019-SOT523 Datasheet, PDF (1/3 Pages) DONGGUAN YOU FENG WEI ELECTRONICS CO., LTD – N-channel MOSFET

2SK3019
N-channel MOSFET
■ ^FEATURES
z Low on-resistance
z Fast switching speed
z Low voltage drive makes this device ideal for portable equipment
z Easily designed drive circuits
z Easy to parallel
3
2
1.GATE
2.SOURCE
1
3.DRAIN
■ Simplified outline(SOT-523)
■ MOSFET MAXIMUM RATINGS (Ta = 25°C unless otherwise noted)
Symbol Parameter
VDS
Drain-Source Voltage
VGSS
Gate-Source Voltage
ID
Continuous Drain Current
RθJA
Thermal Resistance, Junction-to-Ambient
PD
Power Dissipation
Value
30
±20
0.1
833
0.15
Units
V
V
A
℃ /W
W
TJ
Junction Temperature
Tstg
Storage Temperature
150
℃
-55~+150 ℃
Equivalent circuit
Drain
Gate
Gate
Protection
Diode
Source
■ MOSFET ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol Test Condition
Min Typ Max
Off Characteristics
Drain-Source Breakdown Voltage
VDS
VGS = 0V, ID = 10µA
30
Zero Gate Voltage Drain Current
Gate –Source leakage current
Gate Threshold Voltage
Drain-Source On-Resistance
Forward Transconductance
IDSS
IGSS
VGS(th)
RDS(on)
gFS
VDS =30V,VGS = 0V
VGS =±20V, VDS = 0V
VDS = 3V, ID =100µA
VGS = 4V, ID =10mA
VGS =2.5V,ID =1mA
VDS =3V, ID = 10mA
1
±1
0.8
1.5
8
13
20
Dynamic Characteristics*
Input Capacitance
Ciss
13
Output Capacitance
Coss
VDS =5V,VGS =0V,f =1MHz
9
Reverse Transfer Capacitance
Crss
4
Switching Characteristics*
Turn-On Delay Time
td(on)
15
Rise Time
Turn-Off Delay Time
tr
VGS =5V, VDD =5V,
35
td(off)
ID =10mA, Rg=10Ω, RL=500Ω,
80
Fall Time
tf
80
Units
V
µA
µA
V
Ω
Ω
mS
pF
pF
pF
ns
ns
ns
ns
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