2SK3018W-SOT323 Datasheet, PDF (1/3 Pages) DONGGUAN YOU FENG WEI ELECTRONICS CO., LTD – N-channel MOSFET

2SK3018W
N-channel MOSFET
■ FEATURES
z Low on-resistance
z Fast switching speed
z Low voltage drive makes this device ideal for portable equipment
z Easily designed drive circuits
z Easy to parallel
■ Marking
Marking
KN
■ MOSFET MAXIMUM RATINGS (Ta = 25°C unless otherwise noted)
Symbol Parameter
Value Units
VDS
Drain-Source voltage
30
V
VGSS
Gate-Source Voltage
±20
V
ID
Continuous Drain Current
0.1
A
PD
Power Dissipation
0.2
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature
-55-150
℃
RθJA
Thermal Resistance from Junction to Ambient
625
℃ /W
3
2 _1.GATE
2.SOURCE
1
3.DRAIN
■ Simplified outline(SOT-323)
Equivalent circuit
Drain
Gate
Gate
Protection
Diode
Source
■ MOSFET ELECTRICAL CHARACTERISTICS(Ta=25℃ unless otherwise noted)
Parameter
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Symbol Test Condition
V(BR)DSS VGS = 0V, ID = 10µA
IDSS
VDS =30V,VGS = 0V
Min Typ
30
Gate –Source leakage current
IGSS
VGS =±20V, VDS = 0V
Gate Threshold Voltage
VGS(th) VDS = 3V, ID =100µA
0.8
Drain-Source On-Resistance
RDS(on)
VGS = 4V, ID =10mA
VGS =2.5V,ID =1mA
Forward Transconductance
Dynamic Characteristics*
Input Capacitance
Output Capacitance
gFS
VDS =3V, ID = 10mA
Ciss
Coss
VDS =5V,VGS =0V,f =1MHz
20
13
9
Reverse Transfer Capacitance
Crss
4
Switching Characteristics*
Turn-On Delay Time
td(on)
15
Rise Time
Turn-Off Delay Time
tr
VGS =5V, VDD =5V,
35
td(off)
ID =10mA, Rg=10Ω, RL=500Ω
80
Fall Time
tf
80
*These parameters have no way to verify.
Max Units
V
0.2
µA
±500 nA
1.5
V
8
Ω
13
Ω
mS
pF
pF
pF
ns
ns
ns
ns
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