2SD1766-SOT89 Datasheet, PDF (1/3 Pages) DONGGUAN YOU FENG WEI ELECTRONICS CO., LTD – NPN Transistors

2SD1766
NPN^STr^Mans^Disto^Trs^{y p e}
■ Features
● Collector Current Capability IC=2A
● Collector Emitter Voltage VCEO=32V
● High-speed switching.
● Complements to 2SB1188
3
2
1
1.Base
2.Collector
3.Emitter
■ Simplified outline(SOT-89)
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature range
Symbol
Rating
Unit
VCBO
40
VCEO
32
V
VEBO
5
IC
2
A
PC
0.5
W
TJ
150
℃
Tstg
-55 to 150
■ Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain
Collector output capacitance
Transition frequency
Symbol
Test Conditions
VCBO Ic= 100 μA， IE=0
VCEO Ic= 1 mA， IB=0
VEBO IE= 100μA， IC=0
ICBO VCB= 20 V , IE=0
IEBO VEB= 4V , IC=0
VCE(sat) IC=2 A, IB=200mA
VBE(sat) IC=2 A, IB=200mA
hFE VCE= 3V, IC= 500mA
Cob VCB= 10V,IE=0, f=1MHz
fT
VCE= 5V, IE= 50mA,f=100MHz
Min Typ Max Unit
40
32
V
5
1
uA
1
0.8
V
1.2
82
390
30
pF
100
MHz
■ Classification of hfe
Type
2SD1776-P
Range
82-180
Marking
DBP
2SD1776-Q
120-270
DBQ
2SD1776-R
180-390
DBR
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