2SC3356-SOT-23 Datasheet, PDF (1/4 Pages) DONGGUAN YOU FENG WEI ELECTRONICS CO., LTD – NPN Transistors

2SC3356
NPN Transistors
Features
Low noise and high gain.
NF = 1.1 dB Typ., Ga = 11 dB Typ. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz
High power gain.
MAG = 13 dB Typ. @VCE = 10 V, IC = 20 mA, f = 1.0 GHz
Absolute Maximum Ratings Ta = 25
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current (DC)
Total power dissipation
Junction temperature
Storage temperature range
Symbol
VCBO
VCEO
VEBO
IC
Ptot
Tj
Tstg
Rating
20
12
3.0
100
200
150
-65 to +150
3
2
1. Gate
1
2. Source
3. Drain
■ Simplified outline(SOT23-3L)
Unit
V
V
V
mA
mW
Electrical Characteristics Ta = 25
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage *
Base - emitter saturation voltage *
DC current gain *
Insertion power gain
Noise figure
Reverse transfer capacitance
Transition frequency
Symbol
Test Conditions
Min Typ Max Unit
VCBO Ic= 100 μA， IE= 0
20
VCEO Ic= 1 mA， IB= 0
12
V
VEBO IE= 100 uA， IC= 0
3
ICBO
IEBO
VCB= 10 V , IE= 0
VEB= 3V , IC=0
1
uA
1
VCE(sat) IC=50 mA, IB=5mA
VBE(sat) IC=50 mA, IB=5mA
0.4
V
1.2
hFE VCE= 10V, IC= 20mA
50
400
|S21e | ² VCE = 10 V, IC = 20 mA, f= 1GHz
NF VCE = 10 V, IC = 7 mA, f= 1GHz
11.5
dB
1.1 2
Cre VCB= 10V, IE= 0,f=1MHz
0.55 1 pF
fT
VCE= 10V, IC= 20mA
7
GHz
*. Pulse measurement: PW 350 s, Duty Cycle 2%.
hFE Classification
Type
Range
Marking
2SC3356-R23
50-100
R23
2SC3356-R24
80-160
R24
2SC3356-R25
125-250
R25
2SC3356-R26
250-400
R26
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