2SC1623-SOT23 Datasheet, PDF (1/3 Pages) DONGGUAN YOU FENG WEI ELECTRONICS CO., LTD – NPN Transistors

2SC1623
NPN Transistors
Features
High DC Current Gain:
hFE = 200 TYP.
VCE = 6.0 V, IC = 1.0 mA
High Voltage:
VCE O = 50 V
3
2
1.Base
2.Emitter
1
3.Collector
■ Simplified outline(SOT-23)
Absolute Maximum Ratings Ta = 25
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current (DC)
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
Rating
Unit
VCBO
60
V
VCEO
50
V
VEBO
5
V
IC
100
mA
PC
200
mW
Tj
150
Tstg
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage *
Base - emitter saturation voltage *
Base - emitter voltage *
DC current gain *
Collector output capacitance
Transition frequency
Symbol
Test Conditions
VCBO Ic= 100 μA， IE= 0
VCEO Ic= 1 mA， IB= 0
VEBO IE= 100μA， IC= 0
ICBO VCB= 60 V , IE= 0
IEBO VEB= 5V , IC=0
VCE(sat) IC=100 mA, IB=10mA
VBE(sat) IC=100 mA, IB=10mA
VBE VCE= 6V, IC= 1mA
hFE VCE= 6V, IC= 1mA
Cob VCB= 6V, IE= 0,f=1MHz
fT
VCE= 6V, IE= -10mA
*. PW 350 us,duty cycle 2%
hFE Classification
Type
Range
Marking
2SC1623-L4
90-180
L4
2SC1623-L5
135-270
L5
2SC1623-L6
200-400
L6
2SC1623-L7
300-600
L7
Min Typ Max Unit
60
50
V
5
100
nA
100
0.15 0.3
0.86 1
V
0.55
0.7
90 200 600
3
pF
250
MHz
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