2SB1386-SOT89 Datasheet, PDF (1/4 Pages) DONGGUAN YOU FENG WEI ELECTRONICS CO., LTD – PNP Transistors

2SB1386
PNP Transistors
Features
Low VCE(sat).
VCE(sat) = -0.35V (Typ.)
(IC/IB = -4A / -0.1A)
Excellent DC current gain
Epitaxial planar type
PNP silicon transistor
3
2
1
1.Base
2.Collector
3.Emitter
■ Simplified outline(SOT-89)
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current(Pulse)
Collector power dissipation
Junction temperature
Storage temperature
* Single pulse, Pw=10ms
Symbol
VCBO
VCEO
VEBO
IC
ICP *
PC
Tj
Tstg
Rating
-30
-20
-6
-5
-10
0.5
150
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Collector-emitter saturation voltage
Output capacitance
Transition frequency
Symbol
Test Conditions
BVCBO IC=-50 u A
BVCEO IC=-1mA
BVEBO IE=-50 u A
ICBO VCB=-20V
IEBO VEB=-5V
VCE(sat) IC=-4A,IB=-0.1A
hFE VCE=-2V, IC=-0.5A
Cob VCE=-6V, IE=50mA, f=30MHz
fT VCB=-20V, IE=0A, f=1MHz
hFE Classification
Type
2SB1386-P
Range
82-180
Marking
BHP*
2SB1386-Q
120-270
BHQ*
2SB1386-R
180-390
BHR*
Unit
V
V
V
A
A
W
Min Typ Max Unit
-30
V
-20
V
-6
V
-0.5 u A
-0.5 u A
0.35 -1
V
82
390
120
pF
60
MHz
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