2SB1188-SOT89 Datasheet, PDF (1/4 Pages) DONGGUAN YOU FENG WEI ELECTRONICS CO., LTD – PNP Transistors

2SB1188
PNP ^STr^Mans^Disto^Trs^{y p e}
Features
Low VCE(sat).
VCE(sat) = -0.5V (Typ.)
(IC/IB = -2A / -0.2A)
3
2
1
1.Base
2.Collector
3.Emitter
■ Simplified outline(SOT-89)
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base Voltage
Collector-emitter Voltage
Emitter-base Voltage
Collector current
Collector power dissipation
Jumction temperature
Storage temperature
* PW=100ms
Electrical Characteristics Ta = 25
Parameter
Collector-base breakdown voltae
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-Emitter Saturation Voltage
DC current transfer ratio
Output Capacitance
Transition frequency
Symbol
Rating
Unit
VCBO
-40
V
VCEO
-32
V
VEBO
-5
V
IC
-2
A
ICP *
-3
A
PC
0.5
W
Tj
150
Tstg
-55 to +150
Symbol
Test Conditions
BVCBO IC = -50 uA
BVCEO IC = -1mA
BVEBO IE = -50 A
ICBO VCB = -20V
IEBO VEB = -4V
VCE(sat) IC = -2A , IB = -0.2A
hFE VCE = -3V , IC = -0.5A
Cob ^{VCB = -10V , IE = 0, f = 1MHz}
f T VCE = -5V , IE = 0.5A , f = 30MHz
hFE Classification
Type
2SB1188-P
Range
82-180
Marking
BCP*
2SB1188-Q
120-270
BCQ*
2SB1188-R
180-390
BCR*
Min Typ Max Unit
-40
V
-32
V
-5
V
-1 uA
-1 uA
-0.5 -0.8 V
82
390
50
pF
100
MHz
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