2SA1015-SOT23 Datasheet, PDF (1/3 Pages) DONGGUAN YOU FENG WEI ELECTRONICS CO., LTD – PNP Transistors

2SA1015
PNP Transistors
Features
High voltage and high current
VCEO:=-50V(min.),IC=-150mA(max.)
Low niose: NF=1dB(Typ.) at f=1KHz
3
2
1.Base
2.Emitter
1
3.Collector
■ Simplified outline(SOT-23)
Absolute Maximum Ratings Ta = 25
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Symbol
Rating
Unit
VCBO
-50
V
VCEO
-50
V
VEBO
-5
V
IC
-150
mA
PC
200
mW
TJ
150
Tstg
-55 to 150
Electrical Characteristics Ta = 25
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Symbol
VCBO
VCEO
VEBO
ICBO
ICEO
IEBO
hFE
VCE(sat)
VBE(sat)
fT
Testconditions
Ic= -100 A, IE=0
Ic= -0.1mA, IB=0
IE= -100 A, IC=0
VCB=-50V , IE=0
VCE= -50V , IB=0
VEB=- 5V , IC=0
VCE=-6V, IC= -2mA
IC=-100 mA, IB= -10mA
IC=-100 mA, IB= -10mA
VCE=-10V, IC= -1mA,f=30MHz
Min Typ Max Unit
-50
V
-50
V
-5
V
-0.1
A
-0.1
A
-0.1
A
130
400
-0.3 V
-1.1 V
80
MHz
hFE Classification
Type
Range
Marking
2SA1015
200-400
BA
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