2N7002K-SOT23 Datasheet, PDF (1/4 Pages) DONGGUAN YOU FENG WEI ELECTRONICS CO., LTD – N-Channel Enhancement MOSFET

2N7002K
N-Channel Enhancement MOSFET
Features
Low On-Resistance: RDS(ON)
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
ƽ ESD Protected 2KV HBM
3
2
1.GATE
2.SOURCE
1
3.DRAIN
■ Simplified outline(SOT-23)
D rain
Gate
Gate
Protection
Diode
Source
Absolute Maximum Ratings Ta=25
Parameter
Drain-Source Voltage
Gate-Source Voltage -Continuous
Drain Current
-Continuous ( Note:1)
-Pulsed
Power Dissipation (Note 1)
Thermal Resistance.Junction- to-Ambient
Junction Temperature
Junction and Storage Temperature Range
Notes: 1. Device mounted on FR-4 PCB.
Electrical Characteristics Ta = 25
Parameter
Drain-Source Breakdown Voltage (Note.2)
Zero Gate Voltage Drain Current (Note.2)
Gate-Body Leakage Current
(Note.2)
Gate Threshold Voltage
(Note.2)
Static Drain-Source On-Resistance (Note.2)
Forward Transfer Admittance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Turn-On DelayTime
Turn-Off DelayTime
(Note.2)
Symbol
VDS
VGS
ID
PD
RthJA
TJ
Tstg
Rating
60
±20
300
800
350
357
150
-55 to 150
Unit
V
mA
mW
ć/W
ć
Symbol
VDSS
IDSS
IGSS
VGS(th)
RDS(On)
| Yfs |
Ciss
Coss
Crss
Qg
td(on)
td(off)
Test Conditions
ID=100­A, VGS=0V
VDS=60V, VGS=0V
VDS=0V, VGS=±20V
VDS = 10V, ID = 1mA
VGS=10V, ID=500mA
VGS=10V, ID=50mA
VGS=10V, ID=200mA
VGS=0V, VDS=25V, f=1MHz
VGS=4.5V, VDS=15V, ID=200mA
ID=200mA, VDS=30V,
RG=10ȍ,VGEN=10V,RL=150ȍ
Note: 2. Short duration test pulse used to minimize self-heating effect.
Min Typ Max Unit
60
V
1 ­A
±10 uA
1 1.6 2.5 V
2
¡
3
80
ms
50
25 pF
5
0.8 nC
20
ns
40
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