2N7002-SOT23 Datasheet, PDF (1/3 Pages) DONGGUAN YOU FENG WEI ELECTRONICS CO., LTD – N-Channel Enhancement MOSFET

2N7002
N-Channel Enhancement MOSFET
3
Features
High density cell design for low RDS(ON)
Voltage controlled small signal switch
Rugged and reliable
High saturation current capability
Absolute Maximum Ratings Ta=25
Parameter
Drain-Source voltage
Drain Current
Power Dissipation
Junction Temperature
Storage Temperature
Electrical Characteristics Ta = 25
Parameter
Drain-source breakdown voltage
Zero gate voltage drain current
Gate-body leakage
Gate-threshold voltage
Drain-source on-resistance
On-state drain current
Forward tran conductance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on Time
Turn-off Time
Drain-source on-voltage
Diode forward voltage
2
1.GATE
2.SOURCE
1
3.DRAIN
■ Simplified outline(SOT-23)
D
Symbol
VDS
ID
PD
TJ
Tstg
Rating
60
115
225
150
-55 to 150
G
S
Unit
V
mA
mW
Symbol
VDSS
IDSS
lGSS
VGS(th)
rDS(0n)
ID(on)
gts
Ciss
COSS
CrSS
td(0n)
td(off)
VDS(on)
VSD
Testconditions
VGS=0 V, ID=10 0 μA
VDS=60 V, VGS=0 V
VDS=0 V, VGS= 25 V
VDS=VGS, ID=250 μA
VGS=10 V, ID=500 mA
VGS=5 V, ID=50 mA
VGS=10 V, VDS=7 V
VDS=10 V, ID=200 mA
VDS=25 V, VGS=0 V, f=1 MHz
VDD=25 V, RL=50
ID=500 mA,VGEN=10 V
RG=25
VGS=10V, ID =500mA
VGS=5V, ID =50mA
IS=115 mA, VGS=0 V
Min Typ Max Unit
60
V
80 nA
80 nA
1
2.5 V
7.5
7.5
500
mA
80
ms
50
25 pF
5
20
ns
40
3.75 ^V
0.375 V
0.55
1.2 V
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