20V80SP-TO277 Datasheet, PDF (1/3 Pages) DONGGUAN YOU FENG WEI ELECTRONICS CO., LTD – Trench MOS Barrier Schottky Rectifier

20V80SP TO277
Trench MOS Barrier Schottky Rectifier
TO-277
Features
• Advanced trench technology
• Low forward voltage drop
• Low power losses
• High efficiency operation
• Lead Free Finish, RoHS Compliant
Applications
• DC/DC Converters
• AC/DC Adaptors
Cathode
3
1
Anode
2
Maximum ratings and electrical characteristics (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Limit
Unit
Maximum repetitive peak reverse voltage
VRRM
80
V
Maximum average forward rectified current
IF(AV)
20
A
Peak forward surge current 8.3 ms single half
IFSM
320
A
sine-wave superimposed on rated load per diode
Operating junction and storage temperature range
TJ, TSTG
-50 to +150
℃
Typical thermal resistance per diode
(Mounted on FR-4 PCB)
RƟJA
72
°C/W
TYP. MAX.
Instantaneous forward voltage
IF=A
IF=20A
T_J=25°C
VF(1)
0.
-
0.
0.72
V
IF=A
TJ=125°C
IF=20A
0.
-
0.
-
Instantaneous reverse current per diode TJ=25°C
IR(2)
30
150
uA
at rated reverse voltage
TJ=125°C
20
-
mA
Notes:
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width ≦ 40 ms
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