1N5817W Datasheet, PDF (1/3 Pages) SEMTECH ELECTRONICS LTD. – 1.0A SURFACE MOUNT SCHOTTKY BARRIER DIODE

1N5817W THRU 1N5819W
SCHOTTKY BARRIER RECTIFIERS
FEATURES
• Metal silicon junction, majority carrier conduction
• Guarding for overvoltage protection
• Low power loss, high efficiency
• High current capability
• low forward voltage drop
• High surge capability
• For use in low voltage, high frequency inverters,
free wheeling, and polarity protection applications
PINNING
PIN
DESCRIPTION
1
Cathode
2
Anode
1
2
Top View
Marking Code: 1N5817W---12A
1N5818W---13A
1N5819W---14A
Simplified outline SOD-123FL and symbol
MECHANICAL DATA
• Case: SOD-123FL
• Terminals: Solderable per MIL-STD-750, Method 2026
• Approx. Weight:15mg 0.00048oz
Maximum Ratings and Electrical characteristics
Ratings at 25 °C ambient temperature unless otherwise specified.
Parameter
Symbols 1N5817W 1N5818W 1N5819W Units
Maximum Repetitive Peak Reverse Voltage
VRRM
20
30
40
V
Maximum RMS voltage
VRMS
14
21
28
V
Maximum DC Blocking Voltage
VDC
20
30
40
V
Maximum Average Forward Rectified Current
0.375" (9.5 mm) Lead Length at TL = 90°C
I F ( AV )
1
A
Peak Forward Surge Current, 8.3ms Single Half Sine-wave
Superimposed On Rated Load (JEDEC method) at TL = 70°C
IFSM
25
A
Maximum Instantaneous Forward Voltage at 1 A
Maximum Instantaneous Forward Voltage at 3.1 A
Maximum Instantaneous Reverse Current at TA = 25°C
Rated DC Reverse Voltage
TA = 100°C
VF
0.45
0.55
0.6
0.75
0.875
0.9
V
IR
1
10
mA
Typical Junction Capacitance
Cj
110
pF
Storage and Operating Junction Temperature Range
Tj, Tstg
-55 ~ +125
°C