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| 1N5391 Datasheet, PDF (1/3 Pages) Pan Jit International Inc. – PLASTIC SILICON RECTIFIER(VOLTAGE - 50 to 1000 Volts CURRENT - 1.5 Amperes) | |||
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1N5391
THRU
1N5399
Features
⢠Low Current Leakage
⢠Low Forward Voltage
⢠High Current Capability
⢠Low Cost
1.5 Amp Rectifier
50 - 1000 Volts
Maximum Ratings
⢠Operating Temperature: -55°C to +125°C
⢠Storage Temperature: -55°C to +150°C
⢠Typical Thermal Resistance; 26°C/W Junction To Lead
DO-15
Catalog
Device Maximum Maximum Maximum
Marking Recurrent
RMS
DC
Number
Peak
Voltage Blocking
D
Reverse
Voltage
Voltage
1N5391
---
50V
35V
50V
1N5392
---
1N5393
---
1N5394
---
100V
200V
300V
70V
140V
210V
100V
200V
300V
A
Cathode
Mark
1N5395
---
400V
280V
400V
B
1N5396
---
500V
350V
500V
1N5397
---
600V
420V
600V
D
1N5398
---
800V
560V
800V
1N5399
---
1000V
700V
1000V
Electrical Characteristics @ 25°C Unless Otherwise Specified
C
Average Forward
Current
IF(AV)
1.5A TA = 70°C
Peak Forward Surge
IFSM
Current
50A 8.3ms, half sine**
Maximum
Instantaneous
VF
1.1V IFM = 1.5A;
Forward Voltage
TJ = 25°C*
Maximum DC
Reverse Current At
IR
5.0μA TJ = 25°C
Rated DC Blocking
50μA TJ = 100°C
Voltage
DIMENSIONS
INCHES
DIM
MIN
MAX
A
.230
.300
B
.104
.140
C
.026
.034
D
1.000
---
MM
MIN
5.80
2.60
.70
25.40
MAX
7.60
3.60
.90
---
NOTE
Typical Junction
CJ
20pF Measured at
Capacitance
1.0MHz, VR=4.0V
*Pulse test: Pulse width 300 μsec, Duty cycle 1%
**8.3ms single half-wave superimposed on rated load(JEDEC method)
at Ta=75 deg C.
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