13001-SOT23 Datasheet, PDF (1/3 Pages) DONGGUAN YOU FENG WEI ELECTRONICS CO., LTD – NPN Transistors

13001
NPN Transistors
■ Features
● Power switching applications
3
2
1.Base
2.Emitter
1
3.Collector
■ Simplified outline(SOT-23)
■ Absolute Maximum Ratings Ta = 25℃
Symbol
Parameter
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
Test conditions
Collector-base breakdown voltage
V(BR)CBO IC= 100μA, IE=0
Collector-emitter breakdown voltage V(BR)CEO IC= 1mA, IB=0
Emitter-base breakdown voltage
V(BR)EBO IE=100μA, IC=0
Collector cut-off current
ICBO
VCB=600 V , IE=0
Collector cut-off current
ICEO
VCE=400V , IB=0
Emitter cut-off current
IEBO
VEB=9V , IC=0
DC current gain
hFE
VCE=20V, IC= 20mA
DC current gain
hFE
VCE=5V, IC= 1mA
Collector-emitter saturation voltage
VCE(sat) IC=100mA, IB= 20mA
Base-emitter saturation voltage
VBE(sat) IC=100mA, IB= 20mA
■ Classification of hfe(1)
Range
8-15
15-20
Value
800
500
9
0.2
0.5
150
-55-150
MIN
TYP
800
500
9
8
8
20-25
Units
V
V
V
A
W
℃
℃
MAX
1
10
1
UNIT
V
V
V
μA
μA
μA
30
0.5
V
1.2
V
25-30
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