10S45SP-TO277 Datasheet, PDF (1/3 Pages) DONGGUAN YOU FENG WEI ELECTRONICS CO., LTD – Trench MOS Barrier Schottky Rectifier, Low VF Low IR

10S45SP TO277
Trench MOS Barrier Schottky Rectifier, Low VF Low IR
TO-277
Features
• Advanced trench technology
• Low forward voltage drop
• Low power losses
• High efficiency operation
• Lead Free Finish, RoHS Compliant
Cathode 3
1
Anode
2
Applications
• DC/DC Converters
• AC/DC Adaptors
Maximum ratings and electrical characteristics (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Limit
Unit
Maximum repetitive peak reverse voltage
VRRM
45
V
Maximum average forward rectified current
IF(AV)
10
A
Peak forward surge current 8.3 ms single half
IFSM
240
A
sine-wave superimposed on rated load per diode
Operating junction and storage temperature range
TJ, TSTG
-40 to +150
°C
Typical thermal resistance per diode(Mounted on FR-4 PCB) RƟJA
72
°C/W
TYP.
MAX.
IF=2A
0.34
-
TJ=25°C
Instantaneous forward voltage IF=10A
VF(1)
0.43
0.47
V
per diode
IF=2A
0.22
-
TJ=125°C
IF=10A
0.34
-
Instantaneous reverse current per diode TJ=25°C
25
100
uA
IR(2)
at rated reverse voltage
TJ=125°C
-
50
mA
Notes:
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width ≦ 40 ms
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