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| MCR100 Datasheet, PDF (1/4 Pages) Motorola, Inc – Silicon Controlled Rectifiers(Reverse Blocking Triode Thyristors) | |||
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0.8A SCRs
Main features
Symbol
IBT(RMS)
V /V DRM B
B
BRRM
IGB T(Q1)
Value
0.8A
400 and 600
200
Unit
A
V
uA
DESCRIPTION
These devices are intened to be interfaced directly to
microcontrollers, logic integrated circuits and other
low power gate trigger circuits.
Weight : 0.22 gram
MCR100 Series
Sensitive Gate / Silicon Controlled Rectifiers
A
G
K
K GA
TO92
Absolute maximum ratings
Symbol
RMS on-state current
ITB (RMS)B ( 180° conduction angle )
Parameter
ITSM B
B
I2t
P
P
dl/dt
IGM B
B
PBG(AV)B
T Bstg
TjB B
Non repetitive surge on-state current
( 1/2 Cycle,Sine Wave , Tj initial=25â )
I2t Value for fusing
P
P
Critical rate of rise of on-state current
IGB
B
=
10mA
diG = 0.1A/us
Peak gate current
Average gate power dissipation
Storage junction temperature range
Operating junction temperature range
F = 50Hz
F = 60Hz
tp = 10ms
t = 10ms
t = 8.3ms
Value
0.8
7
8
0.24
30
1
0.1
-40 to +150
-40 to +110
Unit
A
A
A2s
P
P
A/us
A
W
â
Aprit.2008
Rev.1
1/5
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